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TK150F04K3

Toshiba Semiconductor
Part Number TK150F04K3
Manufacturer Toshiba Semiconductor
Description MOSFETs
Published Sep 6, 2014
Detailed Description TK150F04K3 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIV) TK150F04K3 Swiching Regulator, DC-DC Co...
Datasheet PDF File TK150F04K3 PDF File

TK150F04K3
TK150F04K3

Overview
TK150F04K3 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIV) TK150F04K3 Swiching Regulator, DC-DC Converter Applications Motor Drive Applications 10.
0 ± 0.
3 9.
5 ± 0.
2 1.
0 ± 0.
3 • • • • Low drain-source ON resistance: RDS (ON) = 1.
7mΩ (typ.
) High forward transfer admittance: |Yfs| = 210 S (typ.
) Low leakage current: IDSS = 10 μA (max) (VDS = 40 V) Enhancement-model: Vth = 3.
0 to 4.
0 V (VDS = 10 V, ID = 1 mA) 1.
1 Unit: mm 0.
4 ± 0.
1 10.
0 ± 0.
3 1.
6 Absolute Maximum Ratings (Ta = 25°C) 0.
76 ± 0.
1 Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC Pulse (Note 1) (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 40 40 ±20 150 450 300 234 150 30 175 −55 to 175 Unit V V V A W 1.
4 ± 0.
1 2.
54 ± 0.
25 1 0.
1 ± 0.
1 2 3 2.
35 ± 0.
1 2.
34 ± 0.
25 3.
5 ± 0.
2 0.
4 ± 0.
1 2.
76 1.
2.
8.
0 Drain power dissipation (Tc = 25°C) Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche ener...


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