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TK50F15J1

Toshiba Semiconductor
Part Number TK50F15J1
Manufacturer Toshiba Semiconductor
Description MOSFETs
Published Sep 6, 2014
Detailed Description TK50F15J1 MOSFETs Silicon N-Channel MOS (U-MOS-H) TK50F15J1 1. Applications • • Switching Voltage Regulators DC-DC Con...
Datasheet PDF File TK50F15J1 PDF File

TK50F15J1
TK50F15J1

Overview
TK50F15J1 MOSFETs Silicon N-Channel MOS (U-MOS-H) TK50F15J1 1.
Applications • • Switching Voltage Regulators DC-DC Converters 2.
Features (1) (2) (3) Low drain-source on-resistance: RDS(ON) = 22 mΩ (typ.
) (VGS = 10 V) Low leakage current: IDSS = 10 µA (max) (VDS = 150 V) Enhancement mode: Vth = 2.
0 to 4.
0 V (VDS = 10 V, ID = 1 mA) 3.
Packaging and Internal Circuit 1: Gate 2: Drain (Heatsink) 3: Source TO-220SM(W) 4.
Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Drain-source voltage Gate-source voltage Drain current (DC) Drain current (pulsed) Power dissipation Single-pulse avalanche energy Avalanche current Channel temperature Storage temperature (Note 3) (Note 3) (Tc = 25) (Note 2) (Note 1) (Note 1) Symbol VDSS VGSS ID IDP PD EAS IAR Tch Tstg Rating 150 ±20 50 150 300 273 35 175 -55 to 175 W mJ A  A Unit V Note: Using continuously under heavy loads (e.
g.
the application of high temperature/current/voltage and the significant change in...


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