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TJ100F06M3L

Toshiba Semiconductor
Part Number TJ100F06M3L
Manufacturer Toshiba Semiconductor
Description MOSFETs
Published Sep 6, 2014
Detailed Description TJ100F06M3L MOSFETs Silicon P-Channel MOS (U-MOS) TJ100F06M3L 1. Applications • • • • Automotive Relay Drivers DC-DC C...
Datasheet PDF File TJ100F06M3L PDF File

TJ100F06M3L
TJ100F06M3L

Overview
TJ100F06M3L MOSFETs Silicon P-Channel MOS (U-MOS) TJ100F06M3L 1.
Applications • • • • Automotive Relay Drivers DC-DC Converters Motor Drivers 2.
Features (1) (2) (3) Low drain-source on-resistance: RDS(ON) = 5.
6 mΩ (typ.
) (VGS = -10 V) Low leakage current: IDSS = -10 µA (max) (VDS = -60 V) Enhancement mode: Vth = -2.
0 to -3.
0 V (VDS = -10 V, ID = -1 mA) 3.
Packaging and Internal Circuit 1: Gate 2: Drain (Heatsink) 3: Source TO-220SM(W) 4.
Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Drain-source voltage Gate-source voltage Drain current (DC) Drain current (pulsed) Power dissipation Single-pulse avalanche energy Avalanche current Channel temperature Storage temperature (Note 3) (Note 3) (Tc = 25) (Note 2) (Note 1) (Note 1) Symbol VDSS VGSS ID IDP PD EAS IAR Tch Tstg Rating -60 -20/+10 -100 -300 250 184 -100 175 -55 to 175 W mJ A  A Unit V Note: Using continuously under heavy loads (e.
g.
the application of high temperature/current/volta...


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