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TK5Q60W

Toshiba Semiconductor
Part Number TK5Q60W
Manufacturer Toshiba Semiconductor
Description MOSFETs
Published Sep 6, 2014
Detailed Description TK5Q60W MOSFETs Silicon N-Channel MOS (DTMOS) TK5Q60W 1. Applications • Switching Voltage Regulators 2. Features (1) ...
Datasheet PDF File TK5Q60W PDF File

TK5Q60W
TK5Q60W

Overview
TK5Q60W MOSFETs Silicon N-Channel MOS (DTMOS) TK5Q60W 1.
Applications • Switching Voltage Regulators 2.
Features (1) (2) (3) Low drain-source on-resistance: RDS(ON) = 0.
77 Ω (typ.
) by used to Super Junction Structure : DTMOS Easy to control Gate switching Enhancement mode: Vth = 2.
7 to 3.
7 V (VDS = 10 V, ID = 0.
27 mA) 3.
Packaging and Internal Circuit 1: Gate 2: Drain (Heatsink) 3: Source IPAK 4.
Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Drain-source voltage Gate-source voltage Drain current (DC) Drain current (pulsed) Power dissipation Single-pulse avalanche energy Avalanche current Reverse drain current (DC) Reverse drain current (pulsed) Channel temperature Storage temperature (Note 1) (Note 1) (Tc = 25) (Note 2) (Note 1) (Note 1) Symbol VDSS VGSS ID IDP PD EAS IAR IDR IDRP Tch Tstg Rating 600 ±30 5.
4 21.
6 60 71 1.
4 5.
4 21.
6 150 -55 to 150  W mJ A A Unit V Note: Using continuously under heavy loads (e.
g.
the application of high temperature/current/voltage and the significant change in temperature, etc.
) may cause this product to decrease in the reliability significantly even if the operating conditions (i.
e.
operating temperature/current/voltage, etc.
) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.
e.
reliability test report and estimated failure rate, etc).
Start of commercial production 1 2012-09 2014-01-05 Rev.
2.
0 TK5Q60W 5.
Thermal Characteristics Characteristics Channel-to-case thermal resistance Channel-to-ambient thermal resistance Symbol Rth(ch-c) Rth(ch-a) Max 2.
09 125 Unit /W Note 1: Ensure that the channel temperature does not exceed 150.
Note 2: VDD = 90 V, Tch = 25 (initial), L = 63.
1 mH, RG = 25 Ω, IAR = 1.
4 A Note: This transistor is sensitive to electrostatic discharge and should be handled with ca...


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