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TK6Q60W

Toshiba Semiconductor
Part Number TK6Q60W
Manufacturer Toshiba Semiconductor
Description Silicon N-Channel MOSFET
Published Sep 6, 2014
Detailed Description TK6Q60W MOSFETs Silicon N-Channel MOS (DTMOS) TK6Q60W 1. Applications • Switching Voltage Regulators 2. Features (1) ...
Datasheet PDF File TK6Q60W PDF File

TK6Q60W
TK6Q60W

Overview
TK6Q60W MOSFETs Silicon N-Channel MOS (DTMOS) TK6Q60W 1.
Applications • Switching Voltage Regulators 2.
Features (1) (2) (3) Low drain-source on-resistance: RDS(ON) = 0.
68 Ω (typ.
) by used to Super Junction Structure : DTMOS Easy to control Gate switching Enhancement mode: Vth = 2.
7 to 3.
7 V (VDS = 10 V, ID = 0.
31 mA) 3.
Packaging and Internal Circuit 1: Gate 2: Drain (Heatsink) 3: Source IPAK Start of commercial production 1 2012-09 2014-01-05 Rev.
3.
0 TK6Q60W 4.
Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Drain-source voltage Gate-source voltage Drain current (DC) Drain current (pulsed) Power dissipation Single-pulse avalanche energy Avalanche current Reverse drain current (DC) Reverse drain current (pulsed) Channel temperature Storage temperature (Note 1) (Note 1) (Tc = 25) (Note 2) (Note 1) (Note 1) Symbol VDSS VGSS ID IDP PD EAS IAR IDR IDRP Tch Tstg Rating 600 ±30 6.
2 24.
8 60 84 1.
6 6.
2 24.
8 150 -55 to 150  W mJ A A Unit V Not...


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