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TK7Q60W

Toshiba Semiconductor
Part Number TK7Q60W
Manufacturer Toshiba Semiconductor
Description Silicon N-Channel MOSFET
Published Sep 6, 2014
Detailed Description TK7Q60W MOSFETs Silicon N-Channel MOS (DTMOS) TK7Q60W 1. Applications • Switching Voltage Regulators 2. Features (1) ...
Datasheet PDF File TK7Q60W PDF File

TK7Q60W
TK7Q60W

Overview
TK7Q60W MOSFETs Silicon N-Channel MOS (DTMOS) TK7Q60W 1.
Applications • Switching Voltage Regulators 2.
Features (1) (2) (3) Low drain-source on-resistance: RDS(ON) = 0.
5 Ω (typ.
) by used to Super Junction Structure : DTMOS Easy to control Gate switching Enhancement mode: Vth = 2.
7 to 3.
7 V (VDS = 10 V, ID = 0.
35 mA) 3.
Packaging and Internal Circuit 1: Gate 2: Drain (Heatsink) 3: Source IPAK 4.
Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Drain-source voltage Gate-source voltage Drain current (DC) Drain current (pulsed) Power dissipation Single-pulse avalanche energy Avalanche current Reverse drain current (DC) Reverse drain current (pulsed) Channel temperature Storage temperature (Note 1) (Note 1) (Tc = 25) (Note 2) (Note 1) (Note 1) Symbol VDSS VGSS ID IDP PD EAS IAR IDR IDRP Tch Tstg Rating 600 ±30 7.
0 28 60 92 1.
8 7.
0 28 150 -55 to 150  W mJ A A Unit V Note: Using continuously under heavy loads (e.
g.
the application of high tempe...


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