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TK16A55D

Toshiba Semiconductor
Part Number TK16A55D
Manufacturer Toshiba Semiconductor
Description Silicon N-Channel MOSFET
Published Sep 6, 2014
Detailed Description MOSFETs Silicon N-Channel MOS (π-MOS) TK16A55D 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain...
Datasheet PDF File TK16A55D PDF File

TK16A55D
TK16A55D

Overview
MOSFETs Silicon N-Channel MOS (π-MOS) TK16A55D 1.
Applications • Switching Voltage Regulators 2.
Features (1) Low drain-source on-resistance: RDS(ON) = 0.
28 Ω (typ.
) (2) High forward transfer admittance: |Yfs| = 9.
0 S (typ.
) (3) Low leakage current: IDSS = 10 µA (max) (VDS = 550 V) (4) Enhancement mode: Vth = 2.
0 to 4.
0 V (VDS = 10 V, ID = 1 mA) 3.
Packaging and Internal Circuit TK16A55D 1: Gate (G) 2: Drain (D) 3: Source (S) TO-220SIS 4.
Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Symbol Rating Unit Drain-source voltage VDSS 550 V Gate-source voltage VGSS ±30 Drain current (DC) Drain current (pulsed) Power dissipation Single-pulse avalanche energy Avalanche current Repetitive avalanche energy Reverse drain current (DC) Reverse drain current (pulsed) Channel temperature (Tc = 25) (Note 1) (Note 1) (Note 2) (Note 3) (Note 3) (Note 1) (Note 1) ID IDP PD EAS IAR EAR IDR IDRP Tch 16 A 64 50 W 528 mJ 16 A 5.
0 mJ 16 ...


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