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TK16C60W

Toshiba Semiconductor
Part Number TK16C60W
Manufacturer Toshiba Semiconductor
Description Silicon N-Channel MOSFET
Published Sep 6, 2014
Detailed Description MOSFETs Silicon N-Channel MOS (DTMOS) TK16C60W 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain...
Datasheet PDF File TK16C60W PDF File

TK16C60W
TK16C60W

Overview
MOSFETs Silicon N-Channel MOS (DTMOS) TK16C60W 1.
Applications • Switching Voltage Regulators 2.
Features (1) Low drain-source on-resistance: RDS(ON) = 0.
16 Ω (typ.
) by used to Super Junction Structure : DTMOS (2) Easy to control Gate switching (3) Enhancement mode: Vth = 2.
7 to 3.
7 V (VDS = 10 V, ID = 0.
79 mA) 3.
Packaging and Internal Circuit TK16C60W 1: Gate 2: Drain (Heatsink) 3: Source I2PAK 4.
Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Symbol Rating Unit Drain-source voltage VDSS 600 V Gate-source voltage VGSS ±30 Drain current (DC) (Note 1) ID 15.
8 A Drain current (pulsed) (Note 1) IDP 63.
2 Power dissipation (Tc = 25) PD 130 W Single-pulse avalanche energy (Note 2) EAS 194 mJ Avalanche current IAR 4.
0 A Reverse drain current (DC) (Note 1) IDR 15.
8 Reverse drain current (pulsed) (Note 1) IDRP 63.
2 Channel temperature Tch 150  Storage temperature Tstg -55 to 150 Note: Using continu...


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