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TK16G60W

Toshiba Semiconductor
Part Number TK16G60W
Manufacturer Toshiba Semiconductor
Description N-Channel MOSFET
Published Sep 6, 2014
Detailed Description MOSFETs Silicon N-Channel MOS (DTMOS) TK16G60W 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain...
Datasheet PDF File TK16G60W PDF File

TK16G60W
TK16G60W

Overview
MOSFETs Silicon N-Channel MOS (DTMOS) TK16G60W 1.
Applications • Switching Voltage Regulators 2.
Features (1) Low drain-source on-resistance: RDS(ON) = 0.
16 Ω (typ.
) by used to Super Junction Structure : DTMOS (2) Easy to control Gate switching (3) Enhancement mode: Vth = 2.
7 to 3.
7 V (VDS = 10 V, ID = 0.
79 mA) 3.
Packaging and Internal Circuit TK16G60W D2PAK 1: Gate 2: Drain (Heatsink) 3: Source Start of commercial production 2012-10 1 2013-12-25 Rev.
3.
0 TK16G60W 4.
Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Symbol Rating Unit Drain-source voltage VDSS 600 V Gate-source voltage VGSS ±30 Drain current (DC) (Note 1) ID 15.
8 A Drain current (pulsed) (Note 1) IDP 63.
2 Power dissipation (Tc = 25) PD 130 W Single-pulse avalanche energy (Note 2) EAS 194 mJ Avalanche current IAR 4.
0 A Reverse drain current (DC) (Note 1) IDR 15.
8 Reverse drain current (pulsed) (Note 1) IDRP 63.
2 Channel temperature Tch 150  Storage temperature Tstg -55 to 150 Note: Using continuously under heavy loads (e.
g.
the application of high temperature/current/voltage and the significant change in temperature, etc.
) may cause this product to decrease in the reliability significantly even if the operating conditions (i.
e.
operating temperature/current/voltage, etc.
) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.
e.
reliability test report and estimated failure rate, etc).
5.
Thermal Characteristics Characteristics Channel-to-case thermal resistance Note 1: Ensure that the channel temperature does not exceed 150.
Note 2: VDD = 90 V, Tch = 25 (initial), L = 21.
2 mH, RG = 25 Ω, IAR = 4.
0 A Symbol Rth(ch-c) Max 0.
962 Unit /W Note: This transistor is sensitive to electrostatic discharge and should be handled...


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