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TK16H60C

Toshiba Semiconductor
Part Number TK16H60C
Manufacturer Toshiba Semiconductor
Description Silicon N-Channel MOSFET
Published Sep 6, 2014
Detailed Description TK16H60C TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOS VI) TK16H60C Switching Regulator Application...
Datasheet PDF File TK16H60C PDF File

TK16H60C
TK16H60C

Overview
TK16H60C TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOS VI) TK16H60C Switching Regulator Applications z Low drain−source ON resistance : RDS (ON) = 0.
32 Ω (typ.
) z High forward transfer admittance : |Yfs| = 11 S (typ.
) z Low leakage current : IDSS = 100 μA (max) (VDS = 600 V) z Enhancement mode : Vth = 2.
0 to 4.
0 V (VDS = 10 V, ID = 1 mA) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain−source voltage Drain−gate voltage (RGS = 20 kΩ) Gate−source voltage Drain current DC (Note 1) Pulse (Note 1) Drain power dissipation (Tc = 25°C) Single-pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg 600 V 600 V ±30 V 16 A 64 A 150 W 979 mJ 16 A 15 mJ 150 °C −55 to 150 °C 1: GATE 2: DRAIN (HEAT SINK) 3: SOURCE JEDEC ― JEITA ― TOSHIBA 2-16K1A Weight: 3.
8 g (typ.
) ...


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