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TK16J55D

Toshiba Semiconductor
Part Number TK16J55D
Manufacturer Toshiba Semiconductor
Description Silicon N-Channel MOSFET
Published Sep 6, 2014
Detailed Description TK16J55D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ) TK16J55D Switching Regulator Applications ...
Datasheet PDF File TK16J55D PDF File

TK16J55D
TK16J55D

Overview
TK16J55D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ) TK16J55D Switching Regulator Applications • Low drain-source ON-resistance: RDS (ON) = 0.
31 Ω (typ.
) • High forward transfer admittance: |Yfs| = 6.
5 S (typ.
) • Low leakage current: IDSS = 10 μA (max) (VDS = 550 V) • Enhancement mode: Vth = 2.
0 to 4.
0 V (VDS = 10 V, ID = 1 mA) 2.
0 1.
0 Unit: mm 15.
9 MAX.
Ф3.
2 ± 0.
2 4.
5 20.
0 ± 0.
3 9.
0 2.
0 3.
3 MAX.
20.
5 ± 0.
5 Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source voltage Gate-source voltage Drain current DC (Note 1) Pulse (Note 1) Drain power dissipation (Tc = 25°C) Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range VDSS VGSS ID IDP PD EAS IAR EAR Tch Tstg 550 V ±30 V 16 A 64 250 W 445 mJ 16 A 25 mJ 150 °C −55 to 150 °C 2.
0 ± 0.
3 1.
0 ＋0.
3 －0.
25 5.
45 ± 0.
2 5.
45 ± 0.
2 2.
8 4.
8 MAX.
1.
8 MAX.
＋0.
3 0.
6...


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