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TK31V60W

Toshiba Semiconductor
Part Number TK31V60W
Manufacturer Toshiba Semiconductor
Description Silicon N-Channel MOSFET
Published Sep 6, 2014
Detailed Description TK31V60W MOSFETs Silicon N-Channel MOS (DTMOS) TK31V60W 1. Applications • Switching Voltage Regulators 2. Features (1...
Datasheet PDF File TK31V60W PDF File

TK31V60W
TK31V60W

Overview
TK31V60W MOSFETs Silicon N-Channel MOS (DTMOS) TK31V60W 1.
Applications • Switching Voltage Regulators 2.
Features (1) (2) (3) Low drain-source on-resistance: RDS(ON) = 0.
078 Ω (typ.
) by used to Super Junction Structure : DTMOS Easy to control Gate switching Enhancement mode: Vth = 2.
7 to 3.
7 V (VDS = 10 V, ID = 1.
5 mA) 3.
Packaging and Internal Circuit 1: Gate 2: Source1 3,4: Source2 5: Drain (Heatsink) Notice: Please use the source1 pin for gate input signal return.
Make sure that the main current flows into the source2 pins.
DFN8x8 4.
Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Drain-source voltage Gate-source voltage Drain current (DC) Drain current (pulsed) Power dissipation Single-pulse avalanche energy Avalanche current Reverse drain current (DC) Reverse drain current (pulsed) Channel temperature Storage temperature (Note 1) (Note 1) (Tc = 25) (Note 2) (Note 1) (Note 1) Symbol VDSS VGSS ID IDP PD EAS IAR IDR IDRP Tch Tstg Rating 600 ±30 30.
8 123 240 338 7.
7 30.
8 123 150 -55 to 150  W mJ A A Unit V Note: Using continuously under heavy loads (e.
g.
the application of high temperature/current/voltage and the significant change in temperature, etc.
) may cause this product to decrease in the reliability significantly even if the operating conditions (i.
e.
operating temperature/current/voltage, etc.
) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.
e.
reliability test report and estimated failure rate, etc).
Start of commercial production 1 2013-06 2014-02-25 Rev.
2.
0 TK31V60W 5.
Thermal Characteristics Characteristics Channel-to-case thermal resistance Symbol Rth(ch-c) Max 0.
52 Unit /W Note 1: Ensure that the channel temperature does not exceed 150.
Note 2: VDD = 90 V, Tch = 25 (initial), L = 10 mH, RG = 25 Ω, IAR = 7.
7 A ...


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