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TK10X40D

Toshiba Semiconductor
Part Number TK10X40D
Manufacturer Toshiba Semiconductor
Description Silicon N-Channel MOSFET
Published Sep 6, 2014
Detailed Description MOSFETs Silicon N-Channel MOS (π-MOS) TK10X40D 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain...
Datasheet PDF File TK10X40D PDF File

TK10X40D
TK10X40D

Overview
MOSFETs Silicon N-Channel MOS (π-MOS) TK10X40D 1.
Applications • Switching Voltage Regulators 2.
Features (1) Low drain-source on-resistance: RDS(ON) = 0.
46 Ω (typ.
) (2) High forward transfer admittance: |Yfs| = 5.
0 S (typ.
) (3) Low leakage current: IDSS = 10 µA (max) (VDS = 400 V) (4) Enhancement mode: Vth = 2.
0 to 4.
0 V (VDS = 10 V, ID = 1 mA) 3.
Packaging and Internal Circuit TK10X40D 1: Gate (G) 2: N.
C.
3: Source (S) 4: Drain (D) (Heatsink) TFP 4.
Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Symbol Rating Unit Drain-source voltage VDSS 400 V Gate-source voltage VGSS ±30 Drain current (DC) (Note 1) ID 10 A Drain current (pulsed) (Note 1) IDP 40 Power dissipation (Tc = 25) PD 125 W Single-pulse avalanche energy (Note 2) EAS 337 mJ Avalanche current IAR 10 A Repetitive avalanche energy (Note 3) EAR 12.
5 mJ Channel temperature Tch 150  Storage temperature Tstg -55 to 150 Note: Using continuo...


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