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TK12X53D

Toshiba Semiconductor
Part Number TK12X53D
Manufacturer Toshiba Semiconductor
Description MOSFETs
Published Sep 6, 2014
Detailed Description TK12X53D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ) TK12X53D Switching Regulator Applications ...
Datasheet PDF File TK12X53D PDF File

TK12X53D
TK12X53D

Overview
TK12X53D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ) TK12X53D Switching Regulator Applications 9.
2 MAX.
Unit: mm 7.
0 ± 0.
2 4 0.
8 MAX.
2.
5 0.
7 MAX.
9.
2 MAX.
2.
0 1.
5 2.
0 0.
4 ± 0.
1 • • • • Low drain-source ON resistance: RDS (ON) = 0.
5 Ω (typ.
) High forward transfer admittance: ⎪Yfs⎪ = 6.
0 S (typ.
) Low leakage current: IDSS = 10 μA (max) (VDS = 525 V) Enhancement-mode: Vth = 2.
0 to 4.
0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Gate-source voltage Drain current DC Pulse (Note 1) (Note 1) Symbol VDSS VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 525 ±30 12 48 150 378 12 15 150 −55 to 150 Unit V V A W mJ A mJ °C °C 1.
0 ± 0.
2 1.
0 ± 0.
2 3.
6 ± 0.
2 1 2 3 Drain power dissipation (Tc = 25°C) Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range 1.
2.
3.
4.
：G GATE N.
C.
SOURCE ：S DRAIN ：D JEDEC JEITA TOSHIBA SC-97 2-9F1C Weig...


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