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TK65G10N1

Toshiba Semiconductor
Part Number TK65G10N1
Manufacturer Toshiba Semiconductor
Description Silicon N-Channel MOSFET
Published Sep 6, 2014
Detailed Description TK65G10N1 MOSFETs Silicon N-channel MOS (U-MOS-H) TK65G10N1 1. Applications • Switching Voltage Regulators 2. Feature...
Datasheet PDF File TK65G10N1 PDF File

TK65G10N1
TK65G10N1

Overview
TK65G10N1 MOSFETs Silicon N-channel MOS (U-MOS-H) TK65G10N1 1.
Applications • Switching Voltage Regulators 2.
Features (1) (2) (3) Low drain-source on-resistance: RDS(ON) = 3.
8 mΩ (typ.
) (VGS = 10 V) Low leakage current: IDSS = 10 µA (max) (VDS = 100 V) Enhancement mode: Vth = 2.
0 to 4.
0 V (VDS = 10 V, ID = 1.
0 mA) 3.
Packaging and Internal Circuit 1: Gate 2: Drain 3: Source D2PAK Start of commercial production 1 2013-08 2014-06-30 Rev.
4.
0 TK65G10N1 4.
Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Drain-source voltage Gate-source voltage Drain current (DC) Drain current (DC) Drain current (pulsed) Power dissipation Single-pulse avalanche energy Avalanche current Channel temperature Storage temperature (t = 1 ms) (Tc = 25) (Note 4) (Silicon limit) (Note 1, 2) (Note 1, 3) (Note 1) Symbol VDSS VGSS ID ID IDP PD EAS IAR Tch Tstg Rating 100 ±20 136 65 283 156 93 65 150 -55 to 150 W mJ A  A Unit V Note: Using continuously under heavy load...


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