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K80E08K3

Toshiba
Part Number K80E08K3
Manufacturer Toshiba
Description TK80E08K3
Published Sep 2, 2014
Detailed Description Target Specification TK80E08K3 ) TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U−MOS TK80E08K3 E-Bike/U...
Datasheet PDF File K80E08K3 PDF File

K80E08K3
K80E08K3

Overview
Target Specification TK80E08K3 ) TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U−MOS TK80E08K3 E-Bike/UPS/Inverter Unit: mm Low drain−source ON resistance High forward transfer admittance Low leakage current Enhancement mode : RDS (ON) = 7.
5 mΩ (typ.
) : |Yfs| = 135 S (typ.
) : IDSS = 10 µA (max) (VDS = 75 V) : Vth = 2.
0~4.
0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain−source voltage Drain−gate voltage (RGS = 20 kΩ) Gate−source voltage DC Drain current (Note 1) Symbol VDSS VDGR VGSS ID ID IDP PD EAS IAR EAR dv/dt Tch Tstg Rating 75 75 ±20 80 70 240 200 107 40 20 12 175 −55~175 Unit V V V A A A W mJ A mJ V/ns °C °C DC (Note 1,4) Pulse (...


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