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K2929

Hitachi Semiconductor
Part Number K2929
Manufacturer Hitachi Semiconductor
Description 2SK2929
Published Sep 1, 2014
Detailed Description 2SK2929 Silicon N Channel MOS FET High Speed Power Switching ADE-208-552C (Z) 4th. Edition Jun 1998 Features • Low on-r...
Datasheet PDF File K2929 PDF File

K2929
K2929

Overview
2SK2929 Silicon N Channel MOS FET High Speed Power Switching ADE-208-552C (Z) 4th.
Edition Jun 1998 Features • Low on-resistance R DS =0.
026 Ω typ.
• High speed switching • 4V gate drive device can be driven from 5V source Outline TO–220AB D G 1 2 S 3 1.
Gate 2.
Drain(Flange 3.
Source 2SK2929 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Note: Symbol VDSS VGSS ID I D(pulse) I DR I AP Note3 Note3 Note2 Note1 Ratings 60 ±20 25 100 25 20 34 50 150 –55 to +150 Unit V V A A A A mJ...


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