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TPCC8106

Toshiba Semiconductor
Part Number TPCC8106
Manufacturer Toshiba Semiconductor
Description Silicon P-Channel MOSFET
Published Aug 30, 2014
Detailed Description MOSFETs Silicon P-Channel MOS (U-MOS) TPCC8106 1. Applications • Motor Drivers • DC-DC Converters • Switching Voltage R...
Datasheet PDF File TPCC8106 PDF File

TPCC8106
TPCC8106

Overview
...egulators 2.
Features (1) AEC-Q101 qualified (2) Small, thin package (3) Low drain-source on-resistance: RDS(ON) = 9.
5 mΩ (typ.
) (VGS = -10 V) (4) Low leakage current: IDSS = -10 µA (max) (VDS = -40 V) (5) Enhancement mode: Vth = -2.
0 to -3.
0 V (VDS = -10 V, ID = -1.
0 mA) 3.
Packaging and Internal Circuit TPCC8106 TSON Advance 1,2,3: Source 4: Gate 5, 6, 7, 8: Drain ©2017-2019 Toshiba Electronic Devices & Storage Corporation 1 Start of commercial production 2012-07 2019-03-14 Rev.
5.
0 TPCC8106 4.
Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Symbol Rating Unit Drain-source voltage VDSS -40 V Gate-source voltage VGSS -20/+10 Drain cur...


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