|
Part Number
|
TPN2R503NC |
|
Manufacturer
|
Toshiba |
|
Description
|
MOSFETs |
|
Published
|
Aug 29, 2014 |
|
Datasheet
|
 TPN2R503NC PDF File
|
Features
(1) (2) (3) (4) Small footprint due to a small and thin package Low drain-source on-resistance: RDS(ON) = 2.1 mΩ (typ.) (VGS = 10 V) Low leakage current: IDSS = 10 µA (max) (VDS = 30 V) Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 0.5 mA)
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