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(1) (2) (3) (4) (5) High-speed switching Small gate charge: QSW = 5.5 nC (typ.) Low drain-source on-resistance: RDS(ON) = 11 mΩ (typ.) Low leakage current: IDSS = 10 µA (max) (VDS = 60 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 0.2 mA)...

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