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(1) (2) (3) (4) (5) High-speed switching Small gate charge: QSW = 9.2 nC (typ.) Low drain-source on-resistance: RDS(ON) = 6.0 mΩ (typ.) (VGS = 10 V) Low leakage current: IDSS = 10 µA (max) (VDS = 60 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V...

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