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(1) (2) (3) (4) (5) (6) Small, thin package High-speed switching Small gate charge: QSW = 4.1 nC (typ.) Low drain-source on-resistance: RDS(ON) = 25 mΩ (typ.) (VGS = 10 V) Low leakage current: IDSS = 10 µA (max) (VDS = 80 V) Enhancement mode: Vth = 2...

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