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(1) (2) (3) (4) (5) (6) Small, thin package High-speed switching Small gate charge: QSW = 3.2 nC (typ.) Low drain-source on-resistance: RDS(ON) = 15 mΩ (typ.) (VGS = 4.5 V) Low leakage current: IDSS = 10 µA (max) (VDS = 30 V) Enhancement mode: Vth = ...

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