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TPN11003NL

Toshiba
Part Number TPN11003NL
Manufacturer Toshiba
Description MOSFETs
Published Aug 29, 2014
Detailed Description TPN11003NL MOSFETs Silicon N-channel MOS (U-MOS-H) TPN11003NL 1. Applications • • Switching Voltage Regulators DC-DC C...
Datasheet PDF File TPN11003NL PDF File

TPN11003NL
TPN11003NL

Overview
TPN11003NL MOSFETs Silicon N-channel MOS (U-MOS-H) TPN11003NL 1.
Applications • • Switching Voltage Regulators DC-DC Converters 2.
Features (1) (2) (3) (4) (5) High-speed switching Small gate charge: QSW = 2.
0 nC (typ.
) Low drain-source on-resistance: RDS(ON) = 12.
6 mΩ (typ.
) (VGS = 4.
5 V) Low leakage current: IDSS = 10 µA (max) (VDS = 30 V) Enhancement mode: Vth = 1.
3 to 2.
3 V (VDS = 10 V, ID = 0.
1 mA) 3.
Packaging and Internal Circuit 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain TSON Advance 4.
Absolute Maximum Ratings (Note) (Ta = 25  unless otherwise specified) Characteristics Drain-source voltage Gate-source voltage Drain current (DC) Drain current (DC) Drain current (pulsed) Power dissipation Power dissipation Power dissipation Single-pulse avalanche energy Avalanche current Channel temperature Storage temperature (Silicon limit) (Tc = 25 ) (t = 1 ms) (Tc = 25 ) (t = 10 s) (t = 10 s) (Note 3) (Note 4) (Note 5) (Note 1), (Note 2) (Note 1) (Note 1) Symbol VDSS VGSS ID ID IDP PD PD PD EAS IAR Tch Tstg Rating 30 ±20 31 11 62 19 1.
9 0.
7 26 11 150 -55 to 150 mJ A  W A Unit V Note: Using continuously under heavy loads (e.
g.
the application of high temperature/current/voltage and the significant change in temperature, etc.
) may cause this product to decrease in the reliability significantly even if the operating conditions (i.
e.
operating temperature/current/voltage, etc.
) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.
e.
reliability test report and estimated failure rate, etc).
Start of commercial production 1 2013-06 2014-02-18 Rev.
3.
0 TPN11003NL 5.
Thermal Characteristics Characteristics Channel-to-case thermal resistance Channel-to-ambient thermal resistance Channel-to-ambient thermal resistance (Tc = 25 ) (t = 10 s) (t = 10 s) (Note 3) (Note 4) Symbol Rth(ch-c) R...


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