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M29W256GL

Micron Technology
Part Number M29W256GL
Manufacturer Micron Technology
Description Parallel NOR Flash Embedded Memory
Published Aug 28, 2014
Detailed Description 256Mb: 3V Embedded Parallel NOR Flash Features Parallel NOR Flash Embedded Memory M29W256GH, M29W256GL Features • Suppl...
Datasheet PDF File M29W256GL PDF File

M29W256GL
M29W256GL

Overview
256Mb: 3V Embedded Parallel NOR Flash Features Parallel NOR Flash Embedded Memory M29W256GH, M29W256GL Features • Supply voltage – VCC = 2.
7–3.
6V (program, erase, read) – VCCQ = 1.
65–3.
6V (I/O buffers) – VPPH = 12V for fast program (optional) • Asynchronous random/page read – Page size: 8 words or 16 bytes – Page access: 25ns, 30ns – Random access: 60ns1, 70ns, 80ns • Fast program commands: 32-word (64-byte) write buffer • Enhanced buffered program commands: 256-word • Program time – 16µs per byte/word TYP – Chip program time: 10s with V PPH and 16s without V PPH • Memory organization – Uniform blocks: 256 main blocks, 128KB, or 64Kwords each • Program/erase controller – Embedded byte/word ...


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