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DMN63D8LDW

Diodes Incorporated
Part Number DMN63D8LDW
Manufacturer Diodes Incorporated
Description Dual N-Channel MOSFET
Published Aug 28, 2014
Detailed Description NEW PRODUCT Product Summary BVDSS 30V RDS(ON) 4.2Ω @ VGS = 4.5V 2.8Ω @ VGS = 10V ID TA = +25°C 200mA 260mA Descript...
Datasheet PDF File DMN63D8LDW PDF File

DMN63D8LDW
DMN63D8LDW

Overview
NEW PRODUCT Product Summary BVDSS 30V RDS(ON) 4.
2Ω @ VGS = 4.
5V 2.
8Ω @ VGS = 10V ID TA = +25°C 200mA 260mA Description This new generation MOSFET has been designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high efficiency power management applications.
Applications  DC-DC Converters  Power Management Functions  Battery Operated Systems and Solid-State Relays  Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories, Transistors, etc.
SOT363 (Standard) DMN63D8LDW DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Features  Dual N-Channel MOSFET  Low On-Resistance  Low Input Capacitance  Fast Switching Speed  Smal...


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