DatasheetsPDF.com

D1517

Inchange Semiconductor
Part Number D1517
Manufacturer Inchange Semiconductor
Description Silicon NPN Power Transistor
Published Aug 26, 2014
Detailed Description com INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD1517 DESCR...
Datasheet PDF File D1517 PDF File

D1517
D1517

Overview
com INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD1517 DESCRIPTION ·Low Collector Saturation Voltage : VCE(sat)= 0.
5V(Max)@ IC= 2A ·Collector-Emitter Breakdown Voltage: V(BR)CEO= 80V (Min) ·Good Linearity of hFE ·High Speed Switching APPLICATIONS ·Designed for power amplifier,power switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage w w s c s i .
w VALUE UNIT 130 V 80 V 7 V 2 A 5 A 25 W n c .
i m e IC Collector Current-Continuous ICM Collector Current-Peak Collector Power Dissipation @ TC=25℃ PC Collector Power ...


Similar Datasheet


Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)