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IPI320N20N3G

Infineon
Part Number IPI320N20N3G
Manufacturer Infineon
Description Power-Transistor
Published Aug 25, 2014
Detailed Description IPB320N20N3 G IPP320N20N3 G IPI320N20N3 G OptiMOSTM3 Power-Transistor Features • N-channel, normal level • Excellent ga...
Datasheet PDF File IPI320N20N3G PDF File

IPI320N20N3G
IPI320N20N3G

Overview
IPB320N20N3 G IPP320N20N3 G IPI320N20N3 G OptiMOSTM3 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) Product Summary V DS R DS(on),max ID • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target application • Halogen-free according to IEC61249-2-21 • Ideal for high-frequency switching and synchronous rectification 200 V 32 mΩ 34 A Type IPB320N20N3 G IPP320N20N3 G IPI320N20N3 G Package Marking PG-TO263-3 320N20N PG-TO220-3 320N20N PG-TO262-3 320N20N Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Value Continuous drain current Pulsed drain current2) Avalanche energy, single pulse Reverse diode dv /dt ID I D,pulse E AS T C=25 °C T C=100 °C T C=25 °C I D=34 A, R GS=25 Ω dv /dt Gate source voltage V GS Power dissipation P tot T C=25 °C Operating and storage temperature T j, T stg IEC climatic category; DIN IEC 68-1 1)J-STD20 and JESD22 2) See figure 3 34 22 136 190 10 ±20 136 -55 .
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175 55/175/56 Rev.
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3 page 1 Unit A mJ kV/µs V W °C 2011-05-20 IPB320N20N3 G IPP320N20N3 G IPI320N20N3 G Parameter Symbol Conditions min.
Values typ.
Unit max.
Thermal characteristics Thermal resistance, junction - case Thermal resistance, junction ambient R thJC R thJA minimal footprint 6 cm2 cooling area3) - - 1.
1 K/W - 62 - 40 Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current V (BR)DSS V GS=0 V, I D=1 mA V GS(th) V DS=V GS, I D=90 µA I DSS V DS=160 V, V GS=0 V, T j=25 °C 200 2 - 3 0.
1 -V 4 1 µA Gate-source leakage current I GSS V DS=160 V, V GS=0 V, T j=125 °C V GS=20 V, V DS=0 V - 10 100 1 100 nA Drain-source on-state resistance R DS(on) V GS=10 V, I D=34 A - 28 32 mΩ Gate resistance Transconductance RG - g fs |V DS|...


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