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IPP35CN10NG

Infineon
Part Number IPP35CN10NG
Manufacturer Infineon
Description Power-Transistor
Published Aug 25, 2014
Detailed Description IPB34CN10N G IPD33CN10N G IPI35CN10N G IPP35CN10N G OptiMOS™2 Power-Transistor Features • N-channel, normal level • Exc...
Datasheet PDF File IPP35CN10NG PDF File

IPP35CN10NG
IPP35CN10NG

Overview
IPB34CN10N G IPD33CN10N G IPI35CN10N G IPP35CN10N G OptiMOS™2 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) Product Summary VDS RDS(on),max (TO252) ID 100 V 33 mW 27 A • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target application • Ideal for high-frequency switching and synchronous rectification • Halogen-free according to IEC61249-2-21 Type IPB34CN10N G IPD33CN10N G IPI35CN10N G IPP35CN10N G Package Marking PG-TO263-3 34CN10N PG-TO252-3 33CN10N PG-TO262-3 35CN10N Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions PG-TO220-3 35CN10N Value Unit Continuous drain current ID T C=25 °C T C=100 °C Pulsed drain current2) I D,pulse T C=25 °C Avalanche energy, single pulse E AS I D=27 A, R GS=25 W Gate source voltage3) V GS Power dissipation P tot T C=25 °C Operating and storage temperature T j, T stg IEC climatic category; DIN IEC 68-1 1)J-STD20 and JESD22 2) see figure 3 3) Tjmax=150°C and duty cycle D=0.
01 for Vgs<-5V 27 A 20 108 47 mJ ±20 V 58 W -55 .
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175 °C 55/175/56 Rev.
1.
091 page 1 2013-07-25 IPB34CN10N G IPD33CN10N G IPI35CN10N G IPP35CN10N G Parameter Symbol Conditions min.
Values typ.
Unit max.
Thermal characteristics Thermal resistance, junction - case R thJC - Thermal resistance, junction - R thJA minimal footprint - ambient (TO220, TO262, TO263) 6 cm2 cooling area4) - Thermal resistance, junction ambient (TO251, TO252) minimal footprint - 6 cm2 cooling area4) - - 2.
6 K/W - 62 - 40 - 75 - 50 Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D=1 mA 100 - Gate threshold voltage V GS(th) V DS=V GS, I D=29 µA 2 3 Zero gate voltage drain current I DSS V DS=80 V, V GS=0 V, T j=25 °C - 0.
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