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IPD350N06LG

Infineon
Part Number IPD350N06LG
Manufacturer Infineon
Description Power-Transistor
Published Aug 25, 2014
Detailed Description IPD350N06L G OptiMOS® Power-Transistor Features • For fast switching converters and sync. rectification • N-channel enh...
Datasheet PDF File IPD350N06LG PDF File

IPD350N06LG
IPD350N06LG

Overview
IPD350N06L G OptiMOS® Power-Transistor Features • For fast switching converters and sync.
rectification • N-channel enhancement - logicl level • 175 °C operating temperature • Avalanche rated • Pb-free lead plating, RoHS compliant Product Summary V DS R DS(on),max ID 60 35 29 V mΩ A Type IPD350N06L G Package Marking PG-TO252-3-11 350N06L Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID T C=25 °C T C=100 °C Pulsed drain current Avalanche energy, single pulse Reverse diode dv /dt Gate source voltage Power dissipation Operating and storage temperature IEC climatic category; DIN IEC 68-1 1) Value 29 20 116 80 6 ±20 Unit A I D,pulse E AS dv /dt V GS P tot T j, T stg T C=25 °C1) I D=29 A, R GS=25 Ω I D=29 A, V DS=48 V, di /dt =200 A/µs, T j,max=175 °C mJ kV/µs V W °C T C=25 °C 68 -55 .
.
.
175 55/175/56 See figure 3 Rev.
1.
1 page 1 2006-05-08 IPD350N06L G Parameter Symbol Conditions min.
Thermal characteristics Thermal resistance, junction - case SMD version, device on PCB R thJC R thJA minimal footprint 6 cm2 cooling area2) Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current V (BR)DSS V GS=0 V, I D=1 mA V GS(th) I DSS V DS=V GS, I D=28 µA V DS=60 V, V GS=0 V, T j=25 °C V DS=60 V, V GS=0 V, T j=125 °C Gate-source leakage current Drain-source on-state resistance I GSS R DS(on) V GS=20 V, V DS=0 V V GS=10 V, I D=29 A V GS=4.
5 V, I D=19 A Gate resistance Transconductance RG g fs |V DS|>2|I D|R DS(on)max, I D=29 A 60 1.
2 1.
6 0.
01 2 1 µA V 2.
2 75 50 K/W Values typ.
max.
Unit 16 1 1 27 36 1.
4 32 100 100 35 47 Ω S nA mΩ 2) Device on 40 mm x 40 mm x 1.
5 mm epoxy PCB FR4 with 6 cm 2 (one layer, 70 µm thick) copper area for drain connection.
PCB is vertical in still air.
Rev.
1.
1 page 2 2006-05-08 IPD350N06L G Parameter Symbol Conditions min.
Dynamic characteristics In...


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