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IPD320N20N3G

Infineon
Part Number IPD320N20N3G
Manufacturer Infineon
Description Power-Transistor
Published Aug 25, 2014
Detailed Description IPD320N20N3 G OptiMOSTM3 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product...
Datasheet PDF File IPD320N20N3G PDF File

IPD320N20N3G
IPD320N20N3G

Overview
IPD320N20N3 G OptiMOSTM3 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target application • Halogen-free according to IEC61249-2-21 Product Summary V DS R DS(on),max ID 200 32 34 V mΩ A • Ideal for high-frequency switching and synchronous rectification Type IPD320N20N3 G Package Marking PG-TO252-3 320N20N Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID T C=25 °C T C=100 °C Pulsed drain current2) Avalanche energy, single pulse Gate source voltage Power dissipation Operating and storage temperature IEC climatic category; DIN IEC 68-1 1) 2) Value 34 24 136 190 ±20 Unit A I D,pulse E AS V GS P tot T j, T stg T C=25 °C I D=34 A, R GS=25 Ω mJ V W °C T C=25 °C 136 -55 .
.
.
175 55/175/56 J-STD20 and JESD22 See figure 3 Rev.
2.
2 page 1 2009-10-22 IPD320N20N3 G Parameter Symbol Conditions min.
Values typ.
max.
Unit Thermal characteristics Thermal resistance, junction - case Thermal resistance, junction ambient R thJC R thJA minimal footprint 6 cm2 cooling area 3) 1.
1 75 50 K/W Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current V (BR)DSS V GS=0 V, I D=1 mA V GS(th) I DSS V DS=V GS, I D=90 µA V DS=160 V, V GS=0 V, T j=25 °C V DS=160 V, V GS=0 V, T j=125 °C Gate-source leakage current Drain-source on-state resistance Gate resistance Transconductance I GSS R DS(on) RG g fs |V DS|>2|I D|R DS(on)max, I D=34 A V GS=20 V, V DS=0 V V GS=10 V, I D=34 A 200 2 3 0.
1 4 1 µA V 28 10 1 27 2.
5 55 100 100 32 nA mΩ Ω S 2 Device on 40 mm x 40 mm x 1.
5 mm epoxy PCB FR4 with 6 cm (one layer, 70 µm thick) copper area for drain connection.
PCB is vertical in still air.
3) Rev.
2.
2 page 2...


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