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IPD30N06S4L-23

Infineon
Part Number IPD30N06S4L-23
Manufacturer Infineon
Description Power-Transistor
Published Aug 25, 2014
Detailed Description IPD30N06S4L-23 OptiMOS®-T2 Power-Transistor Product Summary V DS R DS(on),max ID 60 23 30 PG-TO252-3-11 V mΩ A Featur...
Datasheet PDF File IPD30N06S4L-23 PDF File

IPD30N06S4L-23
IPD30N06S4L-23

Overview
IPD30N06S4L-23 OptiMOS®-T2 Power-Transistor Product Summary V DS R DS(on),max ID 60 23 30 PG-TO252-3-11 V mΩ A Features • N-channel - Enhancement mode • AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant) • 100% Avalanche tested Type IPD30N06S4L-23 Package PG-TO252-3-11 Marking 4N06L23 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol ID Conditions T C=25°C, V GS=10V T C=100°C, V GS=10V1) Pulsed drain current1) Avalanche energy, single pulse1) Avalanche current, single pulse Gate source voltage Power dissipation Operating and storage temperature IEC climatic category; DIN IEC 68-1 I D,pulse E AS I AS V GS P tot T j, T stg T C=25°C I D=15A T C=25°C Value 30 21 120 18 30 ±16 36 -55 .
.
.
+175 55/175/56 mJ A V W °C − Unit A Rev.
1.
0 page 1 2009-03-23 IPD30N06S4L-23 Parameter Symbol Conditions min.
Values typ.
max.
Unit Thermal characteristics1) Thermal resistance, junction - case SMD version, device on PCB R thJC R thJA minimal footprint 6 cm2 cooling area2) Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current V (BR)DSS V GS=0V, I D= 1mA V GS(th) I DSS V DS=V GS, I D=10µA V DS=60V, V GS=0V, T j=25°C V DS=60V, V GS=0V, T j=125°C2) Gate-source leakage current Drain-source on-state resistance I GSS R DS(on) V GS=16V, V DS=0V V GS=4.
5V, I D=15A V GS=10V, I D=30A 60 1.
2 1.
7 0.
01 2.
2 1 µA V 4.
2 62 40 K/W - 5 27 18 100 100 40 23 nA mΩ Rev.
1.
0 page 2 2009-03-23 IPD30N06S4L-23 Parameter Symbol Conditions min.
Values typ.
max.
Unit Dynamic characteristics1) Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics1) Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage Reverse Diode Diode continous...


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