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IPD30N06S3-24

Infineon
Part Number IPD30N06S3-24
Manufacturer Infineon
Description Power-Transistor
Published Aug 25, 2014
Detailed Description IPD30N06S3-24 OptiMOS®-T Power-Transistor Product Summary V DS R DS(on),max ID 55 24 30 V mΩ A Features • N-channel -...
Datasheet PDF File IPD30N06S3-24 PDF File

IPD30N06S3-24
IPD30N06S3-24


Overview
IPD30N06S3-24 OptiMOS®-T Power-Transistor Product Summary V DS R DS(on),max ID 55 24 30 V mΩ A Features • N-channel - Normal Level - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green package (RoHS compliant) • 100% Avalanche tested PG-TO252-3-11 Type IPD30N06S3-24 Package PG-TO252-3-11 Marking 3N0624 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current1) Symbol ID Conditions T C=25 °C, V GS=10 V T C=100 °C, V GS=10 V2) Pulsed drain current2) Avalanche energy, single pulse2) Avalanche current, single pulse Gate source voltage3) Power dissipation Operating and storage temperature IEC climatic category; DIN IEC 68-1 I D,pulse E AS I AS V GS P tot T j, T stg T C=25 °C T C=25 °C I D=15 A Value 30 23 120 100 30 ±20 45 -55 .
.
.
+175 55/175/56 mJ A V W °C Unit A Rev.
1.
1 page 1 2007-11-07 IPD30N06S3-24 Parameter Symbol Conditions min.
Values typ.
max.
Unit Thermal characteristics2) Thermal resistance, junction - case SMD version, device on PCB R thJC R thJA minimal footprint 6 cm2 cooling area4) Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current V (BR)DSS V GS=0 V, I D= 1 mA V GS(th) I DSS V DS=V GS, I D=20 µA V DS=55 V, V GS=0 V, T j=25 °C V DS=55 V, V GS=0 V, T j=125 °C2) Gate-source leakage current Drain-source on-state resistance I GSS RDS(on) V GS=20 V, V DS=0 V V GS=10 V, I D=17 A 55 2.
1 3.
0 0.
01 4.
0 1 µA V 3.
3 62 40 K/W - 1 1 21 100 100 24 nA mΩ Rev.
1.
1 page 2 2007-11-07 IPD30N06S3-24 Parameter Symbol Conditions min.
Values typ.
max.
Unit Dynamic characteristics2) Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics2) Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage Reverse Di...


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