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IPD30N03S4L-14

Infineon
Part Number IPD30N03S4L-14
Manufacturer Infineon
Description Power-Transistor
Published Aug 25, 2014
Detailed Description IPD30N03S4L-14 OptiMOS®-T2 Power-Transistor Product Summary V DS R DS(on),max ID 30 13.6 30 V mΩ A Features • N-chann...
Datasheet PDF File IPD30N03S4L-14 PDF File

IPD30N03S4L-14
IPD30N03S4L-14

Overview
IPD30N03S4L-14 OptiMOS®-T2 Power-Transistor Product Summary V DS R DS(on),max ID 30 13.
6 30 V mΩ A Features • N-channel - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green product (RoHS compliant) • Ultra low Rds(on) • 100% Avalanche tested PG-TO252-3-11 Type IPD70N03S4L-04 Package PG-TO252-3-11 Marking 4N03L04 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current1) Symbol ID Conditions T C=25 °C, V GS=10 V T C=100 °C, V GS=10 V2) Pulsed drain current2) Avalanche energy, single pulse Avalanche current, single pulse Gate source voltage Power dissipation Operating and storage temperature IEC climatic category; DIN IEC 68-1 I D,pulse E AS I AS V GS P tot T j, T stg T C=25 °C T C=25 °C I D=30 A T C=25 °C Value 30 27 120 16 30 ±16 31 -55 .
.
.
+175 55/175/56 mJ A V W °C Unit A Rev.
2.
0 page 1 2007-05-22 IPD30N03S4L-14 Parameter Symbol Conditions min.
Values typ.
max.
Unit Thermal characteristics2) Thermal resistance, junction - case SMD version, device on PCB R thJC R thJA minimal footprint 6 cm2 cooling area3) Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current V (BR)DSS V GS=0 V, I D= 1 mA V GS(th) I DSS V DS=V GS, I D=10 µA V DS=30 V, V GS=0 V, T j=25 °C V DS=30 V, V GS=0 V, T j=125 °C2) V DS=18 V, V GS=0 V, T j=85 °C2) Gate-source leakage current Drain-source on-state resistance I GSS R DS(on) V GS=16 V, V DS=0 V V GS=4.
5 V, I D=15 A V GS=10 V, I D=30 A 30 1.
0 1.
5 0.
01 2.
2 1 µA V 4.
9 62 40 K/W - 10 1000 - 5 1 16.
1 11.
2 60 100 20.
5 13.
6 nA mΩ Rev.
2.
0 page 2 2007-05-22 IPD30N03S4L-14 Parameter Symbol Conditions min.
Values typ.
max.
Unit Dynamic characteristics2) Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteris...


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