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IPD30N03S4L-09

Infineon
Part Number IPD30N03S4L-09
Manufacturer Infineon
Description Power-Transistor
Published Aug 25, 2014
Detailed Description IPD30N03S4L-09 OptiMOS®-T2 Power-Transistor Product Summary V DS R DS(on),max ID 30 9.0 30 PG-TO252-3-11 V mΩ A Featu...
Datasheet PDF File IPD30N03S4L-09 PDF File

IPD30N03S4L-09
IPD30N03S4L-09

Overview
IPD30N03S4L-09 OptiMOS®-T2 Power-Transistor Product Summary V DS R DS(on),max ID 30 9.
0 30 PG-TO252-3-11 V mΩ A Features • N-channel - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green product (RoHS compliant) • 100% Avalanche tested Type IPD30N03S4L-09 Package PG-TO252-3-11 Marking 4N03L09 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current1) Symbol ID Conditions T C=25°C, V GS=10V T C=100°C, V GS=10V2) Pulsed drain current2) Avalanche energy, single pulse2) Avalanche current, single pulse Gate source voltage Power dissipation Operating and storage temperature IEC climatic category; DIN IEC 68-1 I D,pulse E AS I AS V GS P tot T j, T stg T C=25°C I D=30A T C=25°C Value 30 30 120 28 30 ±16 42 -55 .
.
.
+175 55/175/56 mJ A V W °C − Unit A Rev.
1.
0 page 1 2008-08-20 IPD30N03S4L-09 Parameter Symbol Conditions min.
Values typ.
max.
Unit Thermal characteristics2) Thermal resistance, junction - case SMD version, device on PCB R thJC R thJA minimal footprint 6 cm2 cooling area3) Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current V (BR)DSS V GS=0V, I D= 1mA V GS(th) I DSS V DS=V GS, I D=13µA V DS=30V, V GS=0V, T j=25°C V DS=30V, V GS=0V, T j=125°C2) Gate-source leakage current Drain-source on-state resistance I GSS R DS(on) V GS=16V, V DS=0V V GS=4.
5V, I D=15A V GS=10V, I D=30A 30 1.
0 1.
5 0.
1 2.
2 1 µA V 3.
6 62 40 K/W - 10 10.
4 7.
3 100 100 13.
5 9.
0 nA mΩ Rev.
1.
0 page 2 2008-08-20 IPD30N03S4L-09 Parameter Symbol Conditions min.
Values typ.
max.
Unit Dynamic characteristics2) Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics2) Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage Reverse D...


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