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IPD30N03S2L-07

Infineon
Part Number IPD30N03S2L-07
Manufacturer Infineon
Description Power-Transistor
Published Aug 25, 2014
Detailed Description IPD30N03S2L-07 OptiMOS® Power-Transistor Features • N-channel Logic Level - Enhancement mode • Automotive AEC Q101 qual...
Datasheet PDF File IPD30N03S2L-07 PDF File

IPD30N03S2L-07
IPD30N03S2L-07

Overview
IPD30N03S2L-07 OptiMOS® Power-Transistor Features • N-channel Logic Level - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green package (lead free) • Ultra low Rds(on) • 100% Avalanche tested Product Summary V DS R DS(on),max ID 30 6.
7 30 V mΩ A PG-TO252-3-11 Type IPD30N03S2L-07 Package PG-TO252-3-11 Marking 2N03L07 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current1) Symbol ID Conditions T C=25 °C, V GS=10 V T C=100 °C, V GS=10 V2) Pulsed drain current2) Avalanche energy, single pulse Gate source voltage Power dissipation Operating and storage temperature IEC climatic category; DIN IEC 68-1 I D,pulse E AS V GS P tot T j, T stg T C=25 °C T C=25 °C I D=30A Value 30 30 120 250 ±20 136 -55 .
.
.
+175 55/175/56 mJ V W °C Unit A Rev.
1.
0 page 1 2006-07-18 IPD30N03S2L-07 Parameter Symbol Conditions min.
Values typ.
max.
Unit Thermal characteristics2) Thermal resistance, junction - case Thermal resistance, junction ambient, leaded SMD version, device on PCB R thJC R thJA R thJA minimal footprint 6 cm2 cooling area3) Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current V (BR)DSS V GS=0 V, I D= 1 mA V GS(th) I DSS V DS=V GS, I D=85 µA V DS=30 V, V GS=0 V, T j=25 °C V DS=30 V, V GS=0 V, T j=125 °C2) Gate-source leakage current Drain-source on-state resistance Drain-source on-state resistance I GSS R DS(on) RDS(on) V GS=20 V, V DS=0 V V GS=4.
5 V, I D=30 A V GS=10 V, I D=30 A, 30 1.
2 1.
6 0.
01 2.
0 1 µA V 1.
1 100 75 50 K/W - 1 1 7.
8 5.
6 100 100 9.
8 6.
7 nA mΩ mΩ Rev.
1.
0 page 2 2006-07-18 IPD30N03S2L-07 Parameter Symbol Conditions min.
Values typ.
max.
Unit Dynamic characteristics2) Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Charact...


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