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IRFP064

Vishay
Part Number IRFP064
Manufacturer Vishay
Description Power MOSFET
Published Aug 25, 2014
Detailed Description IRFP064, SiHFP064 Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Co...
Datasheet PDF File IRFP064 PDF File

IRFP064
IRFP064

Overview
IRFP064, SiHFP064 Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.
) (nC) Qgs (nC) Qgd (nC) Configuration VGS = 10 V 190 55 90 Single D FEATURES 60 0.
009 • • • • • • • • Dynamic dV/dt Rating Repetitive Avalanche Rated Ultra Low On- Resistance Very Low Thermal Resistance Isolated Central Mounting Hole 175 °C Operating Temperature Fast Switching Compliant to RoHS Directive 2002/95/EC Available RoHS* COMPLIANT TO-247AC DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The TO-247AC package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220AB devices.
The TO-247AC is similar but superior to the earlier TO-218 package because its isolated mounting hole.
It also provides greater creepage distances between pins to meet the requirements of most safety specifications.
G S D G S N-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free SnPb TO-247AC IRFP064PbF SiHFP064-E3 IRFP064 SiHFP064 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Currente Pulsed Drain Linear Derating Factor Single Pulse Avalanche Energyb Repetitive Avalanche Currenta Repetitive Avalanche Energya Maximum Power Dissipation Peak Diode Recovery dV/dtc Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)d Mounting Torque Currenta VGS at 10 V TC = 25 °C TC = 100 °C SYMBOL VDS VGS ID IDM EAS IAR EAR PD dV/dt TJ, Tstg LIMIT 60 ± 20 70 70 520 2.
0 1000 70 30 300 4.
5 - 55 to + 175 300 10 1.
1 UNIT V A W/°C mJ A mJ W V/ns °C lbf · in N·m TC = 25 °C for 10 s 6-32 or M3 screw Notes a.
Repetitive rating; pulse width limited by maximum junction temperature (see fig.
11).
b.
VDD = 25 V, starting TJ = 25 °C, L = 69 μH, Rg = 25 Ω, IAS = 130 A (see fig.
12).
c.
ISD ≤ 130 ...


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