DatasheetsPDF.com

PMCPB5530X

NXP Semiconductors
Part Number PMCPB5530X
Manufacturer NXP Semiconductors
Description MOSFET
Published Aug 25, 2014
Detailed Description PMCPB5530X 020 -6 20 V, complementary Trench MOSFET Rev. 1 — 26 June 2012 Product data sheet 1. Product profile 1.1 Ge...
Datasheet PDF File PMCPB5530X PDF File

PMCPB5530X
PMCPB5530X

Overview
PMCPB5530X 020 -6 20 V, complementary Trench MOSFET Rev.
1 — 26 June 2012 Product data sheet 1.
Product profile 1.
1 General description Complementary N/P-channel enhancement mode Field-Effect Transistor (FET) in a small and leadless ultra thin DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
DF N2 1.
2 Features and benefits  Very fast switching  Trench MOSFET technology  Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.
65 mm  Exposed drain pad for excellent thermal conduction 1.
3 Applications  Charging switch for portable devices  DC-to-DC converters  Small brushless DC motor drive  Power management in battery-driven portables  Hard disc and computing power management 1.
4 Quick reference data Table 1.
Symbol RDSon Quick reference data Parameter drain-source on-state resistance drain-source on-state resistance drain-source voltage gate-source voltage drain current VGS = 4.
5 V; Tamb = 25 °C; t ≤ 5 s [1] Conditions VGS = 4.
5 V; ID = 3 A; Tj = 25 °C Min - Typ 26 Max 34 Unit mΩ TR1 (N-channel), Static characteristics TR2 (P-channel), Static characteristics RDSon VGS = -4.
5 V; ID = -3.
4 A; Tj = 25 °C 55 70 mΩ TR1 (N-channel) VDS VGS ID Tj = 25 °C -12 20 12 5.
3 V V A NXP Semiconductors PMCPB5530X 20 V, complementary Trench MOSFET Table 1.
Symbol VDS VGS ID [1] Quick reference data …continued Parameter drain-source voltage gate-source voltage drain current VGS = -4.
5 V; Tamb = 25 °C; t ≤ 5 s [1] Conditions Tj = 25 °C Min -12 - Typ - Max -20 12 -4.
5 Unit V V A TR2 (P-channel) Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for drain 6 cm2.
2.
Pinning information Table 2.
Pin 1 2 3 4 5 6 7 8 Pinning information Symbol Description S1 G1 D2 S2 G2 D1 D1 D2 source TR1 gate TR1 drain TR2 source TR2 gate TR2 drain TR1 drain TR1 drain TR2 1 2 3 G1 S1 S2 G2 017aaa261 Simplified outline 6 5 4 Graphic symbol D1 D2 7 8 Transparent top view DFN2020-6 (SOT111...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)