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PMG85XP

NXP Semiconductors
Part Number PMG85XP
Manufacturer NXP Semiconductors
Description MOSFET
Published Aug 25, 2014
Detailed Description TS SO P6 PMG85XP 20 V, 2 A P-channel Trench MOSFET Rev. 1 — 28 June 2011 Product data sheet 1. Product profile 1.1 Gen...
Datasheet PDF File PMG85XP PDF File

PMG85XP
PMG85XP

Overview
TS SO P6 PMG85XP 20 V, 2 A P-channel Trench MOSFET Rev.
1 — 28 June 2011 Product data sheet 1.
Product profile 1.
1 General description P-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
1.
2 Features and benefits  Low threshold voltage  Very fast switching  Trench MOSFET technology 1.
3 Applications  Relay driver  High-speed line driver  High-side loadswitch  Switching circuits 1.
4 Quick reference data Table 1.
Symbol VDS VGS ID RDSon Quick reference data Parameter drain-source voltage gate-source voltage drain current drain-source on-state resistance VGS = -4.
5 V; Tj = 25 °C VGS = -4.
5 V; ID = -2 A; Tj = 25 °C [1] Conditions Tj = 25 °C Min -12 - Typ 90 Max -20 12 -2 115 Unit V V A mΩ Static characteristics [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm2.
NXP Semiconductors PMG85XP 20 V, 2 A P-channel Trench MOSFET 2.
Pinning information Table 2.
Pin 1 2 3 4 5 6 Pinning information Symbol Description D D G S D D drain drain gate source drain drain 1 2 3 S 017aaa094 Simplified outline 6 5 4 Graphic symbol D G SOT363 (TSSOP6) 3.
Ordering information Table 3.
Ordering information Package Name PMG85XP TSSOP6 Description plastic surface-mounted package; 6 leads Version SOT363 Type number 4.
Marking Table 4.
PMG85XP [1] % = placeholder for manufacturing site code Marking codes Marking code[1] YA% Type number PMG85XP All information provided in this document is subject to legal disclaimers.
© NXP B.
V.
2011.
All rights reserved.
Product data sheet Rev.
1 — 28 June 2011 2 of 16 NXP Semiconductors PMG85XP 20 V, 2 A P-channel Trench MOSFET 5.
Limiting values Table 5.
Symbol VDS VGS ID IDM Ptot Limiting values Parameter drain-source voltage gate-source voltage drain current peak drain current total power dissipation VGS = -4.
5 V; Tj = 25 °C VGS = -4.
5 V; Tj ...


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