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PMN80XP

NXP Semiconductors
Part Number PMN80XP
Manufacturer NXP Semiconductors
Description MOSFET
Published Aug 25, 2014
Detailed Description SO T4 57 PMN80XP 20 V, single P-channel Trench MOSFET Rev. 1 — 8 May 2012 Product data sheet 1. Product profile 1.1 G...
Datasheet PDF File PMN80XP PDF File

PMN80XP
PMN80XP


Overview
SO T4 57 PMN80XP 20 V, single P-channel Trench MOSFET Rev.
1 — 8 May 2012 Product data sheet 1.
Product profile 1.
1 General description P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
1.
2 Features and benefits  RDSon specified at 1.
8 V operation  Trench MOSFET technology  Fast switching 1.
3 Applications  Relay driver  High-speed line driver  High-side loadswitch  Switching circuits 1.
4 Quick reference data Table 1.
Symbol VDS VGS ID RDSon Quick reference data Parameter drain-source voltage gate-source voltage drain current drain-source on-state resistance VGS = -4.
5 V; Tamb = 25 °C; t ≤ 5 s VGS = -4.
5 V; ID = -2.
5 A; Tj = 25 °C [1] Conditions Tamb = 25 °C Min -12 - Typ 80 Max -20 12 -3.
2 102 Unit V V A mΩ Static characteristics [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm2.
2.
Pinning information Table 2.
Pin 1 2 3 4 5 6 Pinning information Symbol Description D D G S D D drain drain gate source drain drain 1 2 3 S 017aaa257 Simplified outline 6 5 4 Graphic symbol D G SOT457 (TSOP6) NXP Semiconductors PMN80XP 20 V, single P-channel Trench MOSFET 3.
Ordering information Table 3.
Ordering information Package Name PMN80XP TSOP6 Description plastic surface-mounted package (TSOP6); 6 leads Version SOT457 Type number 4.
Marking Table 4.
PMN80XP Marking codes Marking code WA Type number 5.
Limiting values Table 5.
Symbol VDS VGS ID Limiting values Parameter drain-source voltage gate-source voltage drain current VGS = -4.
5 V; Tamb = 25 °C; t ≤ 5 s VGS = -4.
5 V; Tamb = 25 °C VGS = -4.
5 V; Tamb = 100 °C IDM Ptot peak drain current total power dissipation Tamb = 25 °C; single pulse; tp ≤ 10 µs Tamb = 25 °C Tsp = 25 °C Tj Tamb Tstg IS [1] [2] [2] [1] [1] [1] [1] In accordance with the Absolute Maximum Rating System (IEC 60134).
Conditions Tamb = 25 °C Min -12 -55 -...



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