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PMN40UPE

NXP Semiconductors
Part Number PMN40UPE
Manufacturer NXP Semiconductors
Description MOSFET
Published Aug 25, 2014
Detailed Description PMN40UPE 13 August 2012 20 V, single P-channel Trench MOSFET Product data sheet 1. Product profile 1.1 General descri...
Datasheet PDF File PMN40UPE PDF File

PMN40UPE
PMN40UPE

Overview
PMN40UPE 13 August 2012 20 V, single P-channel Trench MOSFET Product data sheet 1.
Product profile 1.
1 General description P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
1.
2 Features and benefits • Low threshold voltage • Fast switching • Trench MOSFET technology • 4 kV ESD protection 1.
3 Applications • Relay driver • High-speed line driver • High-side loadswitch • Switching circuits 1.
4 Quick reference data Table 1.
Symbol VDS VGS ID RDSon Quick reference data Parameter drain-source voltage gate-source voltage drain current VGS = -4.
5 V; Tamb = 25 °C; t ≤ 5 s VGS = -4.
5 V; ID = -3 A; Tj = 25 °C [1] Conditions Tj = 25 °C Min -8 - Typ - Max -20 8 -6 Unit V V A Static characteristics drain-source on-state resistance [1] 2 - 37 43 mΩ Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm .
Scan or click this QR code to view the latest information for this product NXP Semiconductors PMN40UPE 20 V, single P-channel Trench MOSFET 2.
Pinning information Table 2.
Pin 1 2 3 4 5 6 Pinning information Symbol Description D D G S D D drain drain gate source drain drain S 017aaa259 Simplified outline 6 5 4 Graphic symbol D 1 2 3 G TSOP6 (SOT457) 3.
Ordering information Table 3.
Ordering information Package Name PMN40UPE TSOP6 Description plastic surface-mounted package (TSOP6); 6 leads Version SOT457 Type number 4.
Marking Table 4.
Marking codes Marking code WD Type number PMN40UPE 5.
Limiting values Table 5.
Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol VDS VGS ID Parameter drain-source voltage gate-source voltage drain current VGS = -4.
5 V; Tamb = 25 °C; t ≤ 5 s VGS = -4.
5 V; Tamb = 25 °C VGS = -4.
5 V; Tamb = 100 °C IDM Ptot peak drain current total power dissipation Tamb = 25 °C; single pulse; tp ≤ 10 µs Tamb = 25 °C Tsp = 25 °C PMN40U...


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