DatasheetsPDF.com

PMV48XP

NXP Semiconductors
Part Number PMV48XP
Manufacturer NXP Semiconductors
Description MOSFET
Published Aug 25, 2014
Detailed Description PMV48XP 20 V, 3.5 A P-channel Trench MOSFET Rev. 1 — 21 December 2010 Product data sheet 1. Product profile 1.1 General...
Datasheet PDF File PMV48XP PDF File

PMV48XP
PMV48XP

Overview
PMV48XP 20 V, 3.
5 A P-channel Trench MOSFET Rev.
1 — 21 December 2010 Product data sheet 1.
Product profile 1.
1 General description P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
1.
2 Features and benefits „ Logic-level compatible „ Trench MOSFET technology „ Very fast switching 1.
3 Applications „ High-side loadswitch „ High-speed line driver „ Relay driver „ Switching circuits 1.
4 Quick reference data Table 1.
Symbol VDS VGS ID RDSon Quick reference data Parameter drain-source voltage gate-source voltage drain current drain-source on-state resistance VGS = -4.
5 V; Tamb = 25 °C VGS = -4.
5 V; ID = -2.
4 A; pulsed; tp ≤ 300 µs; δ ≤ 0.
01; Tj = 25 °C [1] Conditions Tamb = 25 °C Min -12 - Typ 48 Max Unit -20 12 -3.
5 55 V V A mΩ Static characteristics [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm2.
NXP Semiconductors PMV48XP 20 V, 3.
5 A P-channel Trench MOSFET 2.
Pinning information Table 2.
Pin 1 2 3 Pinning information Symbol Description G S D gate source drain 1 2 S 017aaa094 Simplified outline 3 Graphic symbol D G SOT23 (TO-236AB) 3.
Ordering information Table 3.
Ordering information Package Name PMV48XP TO-236AB Description plastic surface-mounted package; 3 leads Version SOT23 Type number 4.
Marking Table 4.
PMV48XP [1] % = placeholder for manufacturing site code Marking codes Marking code[1] KN% Type number PMV48XP All information provided in this document is subject to legal disclaimers.
© NXP B.
V.
2010.
All rights reserved.
Product data sheet Rev.
1 — 21 December 2010 2 of 15 NXP Semiconductors PMV48XP 20 V, 3.
5 A P-channel Trench MOSFET 5.
Limiting values Table 5.
Symbol VDS VGS ID IDM Ptot Limiting values Parameter drain-source voltage gate-source voltage drain current peak drain current total power dissipation VGS = -4.
5 V; Tamb = 25 °C VGS = -4.
5...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)