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PMV33UPE

NXP Semiconductors
Part Number PMV33UPE
Manufacturer NXP Semiconductors
Description MOSFET
Published Aug 25, 2014
Detailed Description SO T2 3 PMV33UPE 20 V, single P-channel Trench MOSFET Rev. 1 — 12 June 2012 Product data sheet 1. Product profile 1.1 ...
Datasheet PDF File PMV33UPE PDF File

PMV33UPE
PMV33UPE

Overview
SO T2 3 PMV33UPE 20 V, single P-channel Trench MOSFET Rev.
1 — 12 June 2012 Product data sheet 1.
Product profile 1.
1 General description P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
1.
2 Features and benefits  Low threshold voltage  Very fast switching  Trench MOSFET technology  2 kV ESD protected 1.
3 Applications  Relay driver  High-speed line driver  High-side loadswitch  Switching circuits 1.
4 Quick reference data Table 1.
Symbol VDS VGS ID RDSon Quick reference data Parameter drain-source voltage gate-source voltage drain current drain-source on-state resistance VGS = -4.
5 V; Tamb = 25 °C; t ≤ 5 s VGS = -4.
5 V; ID = -3 A; Tj = 25 °C [1] Conditions Tj = 25 °C Min -8 - Typ 30 Max -20 8 -5.
3 36 Unit V V A mΩ Static characteristics [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm2.
NXP Semiconductors PMV33UPE 20 V, single P-channel Trench MOSFET 2.
Pinning information Table 2.
Pin 1 2 3 Pinning information Symbol Description G S D gate source drain 1 2 G Simplified outline 3 Graphic symbol D SOT23 (TO-236AB) S 017aaa259 3.
Ordering information Table 3.
Ordering information Package Name PMV33UPE TO-236AB Description plastic surface-mounted package; 3 leads Version SOT23 Type number 4.
Marking Table 4.
Marking codes Marking code[1] EJ% Type number PMV33UPE [1] % = placeholder for manufacturing site code PMV33UPE All information provided in this document is subject to legal disclaimers.
© NXP B.
V.
2012.
All rights reserved.
Product data sheet Rev.
1 — 12 June 2012 2 of 15 NXP Semiconductors PMV33UPE 20 V, single P-channel Trench MOSFET 5.
Limiting values Table 5.
Symbol VDS VGS ID Limiting values Parameter drain-source voltage gate-source voltage drain current VGS = -4.
5 V; Tamb = 25 °C; t ≤ 5 s VGS = -4.
5 V; Tamb = 25 °C VGS = -4.
5 V; Tamb = 100 °...


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