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PMV32UP

NXP Semiconductors
Part Number PMV32UP
Manufacturer NXP Semiconductors
Description MOSFET
Published Aug 25, 2014
Detailed Description SO T2 PMV32UP 20 V, 4 A P-channel Trench MOSFET Rev. 1 — 11 March 2011 Product data sheet 1. Product profile 1.1 Gener...
Datasheet PDF File PMV32UP PDF File

PMV32UP
PMV32UP

Overview
SO T2 PMV32UP 20 V, 4 A P-channel Trench MOSFET Rev.
1 — 11 March 2011 Product data sheet 1.
Product profile 1.
1 General description P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
3 1.
2 Features and benefits  1.
8 V drain-source on-state resistance rated  Very fast switching  Trench MOSFET technology 1.
3 Applications  Relay driver  High-speed line driver  High-side loadswitch  Switching circuits 1.
4 Quick reference data Table 1.
Symbol VDS VGS ID RDSon Quick reference data Parameter drain-source voltage gate-source voltage drain current drain-source on-state resistance VGS = -4.
5 V; Tamb = 25 °C VGS = -4.
5 V; ID = -2.
4 A; Tj = 25 °C [1] Conditions Tj = 25 °C Min -8 - Typ 32 Max Unit -20 8 -4 36 V V A mΩ Static characteristics [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm2.
NXP Semiconductors PMV32UP 20 V, 4 A P-channel Trench MOSFET 2.
Pinning information Table 2.
Pin 1 2 3 Pinning information Symbol Description G S D gate source drain 1 2 S 017aaa094 Simplified outline 3 Graphic symbol D G SOT23 (TO-236AB) 3.
Ordering information Table 3.
Ordering information Package Name PMV32UP TO-236AB Description plastic surface-mounted package; 3 leads Version SOT23 Type number 4.
Marking Table 4.
PMV32UP [1] % = placeholder for manufacturing site code Marking codes Marking code[1] NF% Type number PMV32UP All information provided in this document is subject to legal disclaimers.
© NXP B.
V.
2011.
All rights reserved.
Product data sheet Rev.
1 — 11 March 2011 2 of 15 NXP Semiconductors PMV32UP 20 V, 4 A P-channel Trench MOSFET 5.
Limiting values Table 5.
Symbol VDS VGS ID IDM Ptot Limiting values Parameter drain-source voltage gate-source voltage drain current peak drain current total power dissipation VGS = -4.
5 V; Tamb = 25 °C VGS = -4.
5 V; Tamb = 100 °C...


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