DatasheetsPDF.com

PMDT670UPE

NXP Semiconductors
Part Number PMDT670UPE
Manufacturer NXP Semiconductors
Description MOSFET
Published Aug 25, 2014
Detailed Description SO T6 PMDT670UPE 20 V, 550 mA dual P-channel Trench MOSFET Rev. 1 — 13 September 2011 Product data sheet 1. Product pr...
Datasheet PDF File PMDT670UPE PDF File

PMDT670UPE
PMDT670UPE

Overview
SO T6 PMDT670UPE 20 V, 550 mA dual P-channel Trench MOSFET Rev.
1 — 13 September 2011 Product data sheet 1.
Product profile 1.
1 General description Dual P-channel enhancement mode Field-Effect Transistor (FET) in an ultra small and flat lead SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
66 1.
2 Features and benefits  Very fast switching  Trench MOSFET technology  ESD protection up to 2 kV  AEC-Q101 qualified 1.
3 Applications  Relay driver  High-speed line driver  High-side loadswitch  Switching circuits 1.
4 Quick reference data Table 1.
Symbol Per transistor VDS VGS ID RDSon drain-source voltage gate-source voltage drain current drain-source on-state resistance VGS = -4.
5 V; Tamb = 25 °C VGS = -4.
5 V; ID = -400 mA; Tj = 25 °C [1] Quick reference data Parameter Conditions Tj = 25 °C Min -8 Typ 0.
67 Max -20 8 -550 0.
85 Unit V V mA Ω Static characteristics (per transistor) [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 1 cm2.
NXP Semiconductors PMDT670UPE 20 V, 550 mA dual P-channel Trench MOSFET 2.
Pinning information Table 2.
Pin 1 2 3 4 5 6 Pinning information Symbol Description S1 G1 D2 S2 G2 D1 source TR1 gate TR1 drain TR2 source TR2 gate TR2 drain TR1 1 2 3 S1 S2 G1 G2 Simplified outline 6 5 4 Graphic symbol D1 D2 SOT666 017aaa260 3.
Ordering information Table 3.
Ordering information Package Name PMDT670UPE Description plastic surface-mounted package; 6 leads Version SOT666 Type number 4.
Marking Table 4.
Marking codes Marking code AG Type number PMDT670UPE 5.
Limiting values Table 5.
Symbol Per transistor VDS VGS ID IDM Ptot drain-source voltage gate-source voltage drain current peak drain current total power dissipation VGS = -4.
5 V; Tamb = 25 °C VGS = -4.
5 V; Tamb = 100 °C Tamb = 25 °C; single pulse; tp ≤ 10 µs Tamb = 25 °C Tsp = 25 °C Per device Ptot Tj Tamb PMDT670UPE Limiting values Parameter Conditions Tj = 25 °C [1] [1] In...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)