DatasheetsPDF.com

PMK50XP

NXP Semiconductors
Part Number PMK50XP
Manufacturer NXP Semiconductors
Description P-channel TrenchMOS extremely low level FET
Published Aug 25, 2014
Detailed Description PMK50XP P-channel TrenchMOS extremely low level FET Rev. 02 — 28 April 2010 Product data sheet 1. Product profile 1.1 G...
Datasheet PDF File PMK50XP PDF File

PMK50XP
PMK50XP

Overview
PMK50XP P-channel TrenchMOS extremely low level FET Rev.
02 — 28 April 2010 Product data sheet 1.
Product profile 1.
1 General description Extremely low level P-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology.
This product is designed and qualified for use in computing, communications, consumer and industrial applications only.
1.
2 Features and benefits „ Low conduction losses due to low on-state resistance 1.
3 Applications „ Battery management „ Load switching 1.
4 Quick reference data Table 1.
Symbol VDS ID Ptot Quick reference data Parameter drain-source voltage drain current total power dissipation drain-source on-state resistance Conditions 25 °C ≤ Tj ≤ 150 °C Tsp = 25 °C; VGS = -4.
5 V; see Figure 1; see Figure 3 Tsp = 25 °C; see Figure 2 Min Typ Max Unit -20 -7.
9 5 V A W Static characteristics RDSon VGS = -4.
5 V; ID = -2.
8 A; Tj = 25 °C; see Figure 9; see Figure 10 40 50 mΩ Dynamic characteristics QGD gate-drain charge VGS = -4.
5 V; ID = -4.
7 A; VDS = -10 V; see Figure 11; see Figure 12 1.
3 nC NXP Semiconductors PMK50XP P-channel TrenchMOS extremely low level FET 2.
Pinning information Table 2.
Pin 1 2 3 4 5 6 7 8 Pinning information Symbol Description S S S G D D D D source source source gate drain drain drain drain 1 4 S 003aaa671 Simplified outline 8 5 Graphic symbol D G SOT96-1 (SO8) 3.
Ordering information Table 3.
Ordering information Package Name PMK50XP SO8 Description plastic small outline package; 8 leads; body width 3.
9 mm Version SOT96-1 Type number PMK50XP All information provided in this document is subject to legal disclaimers.
© NXP B.
V.
2010.
All rights reserved.
Product data sheet Rev.
02 — 28 April 2010 2 of 13 NXP Semiconductors PMK50XP P-channel TrenchMOS extremely low level FET 4.
Limiting values Table 4.
Symbol VDS VDGR VGS ID Limiting values Parameter drain-source voltage drain-gate voltage gate-source voltage drain current Tsp = 25 °C; VGS = -4.
5 V; see Figure ...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)