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PMK30EP

NXP Semiconductors
Part Number PMK30EP
Manufacturer NXP Semiconductors
Description P-channel TrenchMOS extremely low level FET
Published Aug 25, 2014
Detailed Description PMK30EP P-channel TrenchMOS extremely low level FET Rev. 04 — 25 October 2010 Product data sheet 1. Product profile 1.1...
Datasheet PDF File PMK30EP PDF File

PMK30EP
PMK30EP


Overview
PMK30EP P-channel TrenchMOS extremely low level FET Rev.
04 — 25 October 2010 Product data sheet 1.
Product profile 1.
1 General description Extremely low level P-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology.
This product is designed and qualified for use in computing, communications, consumer and industrial applications only.
1.
2 Features and benefits „ Low conduction losses due to low on-state resistance 1.
3 Applications „ Battery management „ Load switching 1.
4 Quick reference data Table 1.
Symbol VDS ID Ptot RDSon Quick reference data Parameter drain-source voltage drain current total power dissipation drain-source on-state resistance gate-drain charge Conditions 25 °C ≤ Tj ≤ 150 °C Tsp = 25 °C; VGS = -10 V; see Figure 1; see Figure 3 Tsp = 25 °C; see Figure 2 VGS = -10 V; ID = -9.
2 A; Tj = 25 °C; see Figure 9 VGS = -10 V; ID = -9.
2 A; VDS = -15 V; Tj = 25 °C; see Figure 11; see Figure 12 Min Typ 16 Max Unit -30 -14.
9 6.
9 19 V A W mΩ Static characteristics Dynamic characteristics QGD 7 nC NXP Semiconductors PMK30EP P-channel TrenchMOS extremely low level FET 2.
Pinning information Table 2.
Pin 1 2 3 4 5 6 7 8 Pinning information Symbol Description S S S G D D D D source source source gate drain drain drain drain 1 4 S 001aaa025 Simplified outline 8 5 Graphic symbol D G SOT96-1 (SO8) 3.
Ordering information Table 3.
Ordering information Package Name PMK30EP SO8 Description plastic small outline package; 8 leads; body width 3.
9 mm Version SOT96-1 Type number 4.
Limiting values Table 4.
Symbol VDS VDGR VGS ID Limiting values Parameter drain-source voltage drain-gate voltage gate-source voltage drain current Tsp = 25 °C; VGS = -10 V; see Figure 1; see Figure 3 Tsp = 100 °C; VGS = -10 V; see Figure 1 IDM Ptot Tstg Tj IS ISM peak drain current total power dissipation storage temperature junction temperature source current peak source current Tsp = 25 °C Tsp = 25 °C; pulsed; tp ≤ 10 µs Tsp = 25 °C...


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