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PMR670UPE

Part Number	PMR670UPE
Manufacturer	NXP Semiconductors
Description	MOSFET
Published	Aug 25, 2014
Detailed Description	SO T4 16 PMR670UPE 20 V, 480 mA P-channel Trench MOSFET Rev. 1 — 13 September 2011 Product data sheet 1. Product profi...
Datasheet	PMR670UPE PDF File

Overview

SO T4 16 PMR670UPE 20 V, 480 mA P-channel Trench MOSFET Rev.
1 — 13 September 2011 Product data sheet 1.
Product profile 1.
1 General description P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT416 (SC-75) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
1.
2 Features and benefits  Very fast switching  Trench MOSFET technology  ESD protection up to 2 kV  AEC-Q101 qualified 1.
3 Applications  Relay driver  High-speed line driver  High-side loadswitch  Switching circuits 1.
4 Quick reference data Table 1.
Symbol VDS VGS ID RDSon Quick reference data Parameter drain-source voltage gate-source voltage drain current drain-source on-state resistance VGS = -4.
5 V; Tamb = 25 °C VGS = -4.
5 V; ID = -400 mA; Tj = 25 °C [1] Conditions Tj = 25 °C Min -8 - Typ 0.
67 Max -20 8 -480 0.
85 Unit V V mA Ω Static characteristics [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm2.
NXP Semiconductors PMR670UPE 20 V, 480 mA P-channel Trench MOSFET 2.
Pinning information Table 2.
Pin 1 2 3 Pinning information Symbol Description G S D gate source drain 1 2 G Simplified outline 3 Graphic symbol D SOT416 (SC-75) S 017aaa259 3.
Ordering information Table 3.
Ordering information Package Name PMR670UPE SC-75 Description plastic surface-mounted package; 3 leads Version SOT416 Type number 4.
Marking Table 4.
Marking codes Marking code AD Type number PMR670UPE PMR670UPE All information provided in this document is subject to legal disclaimers.
© NXP B.
V.
2011.
All rights reserved.
Product data sheet Rev.
1 — 13 September 2011 2 of 16 NXP Semiconductors PMR670UPE 20 V, 480 mA P-channel Trench MOSFET 5.
Limiting values Table 5.
Symbol VDS VGS ID IDM Ptot Limiting values Parameter drain-source voltage gate-source voltage drain current peak drain current total power dissipation VGS = -4.
5 V; Tamb = 25 °C VGS = -4.
5 V; Tamb = 100 °C Tamb = 25 °C; single pulse; tp ≤ 10 µs Tamb =...

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