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BSS84AKW

NXP Semiconductors
Part Number BSS84AKW
Manufacturer NXP Semiconductors
Description MOSFET
Published Aug 25, 2014
Detailed Description SO T3 BSS84AKW 50 V, 150 mA P-channel Trench MOSFET Rev. 1 — 23 May 2011 Product data sheet 1. Product profile 1.1 Gen...
Datasheet PDF File BSS84AKW PDF File

BSS84AKW
BSS84AKW

Overview
SO T3 BSS84AKW 50 V, 150 mA P-channel Trench MOSFET Rev.
1 — 23 May 2011 Product data sheet 1.
Product profile 1.
1 General description P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
23 1.
2 Features and benefits „ Logic-level compatible „ Very fast switching „ Trench MOSFET technology „ ESD protection up to 1 kV „ AEC-Q101 qualified 1.
3 Applications „ Relay driver „ High-speed line driver „ High-side loadswitch „ Switching circuits 1.
4 Quick reference data Table 1.
Symbol VDS VGS ID RDSon Quick reference data Parameter drain-source voltage gate-source voltage drain current drain-source on-state resistance VGS = -10 V; Tamb = 25 °C VGS = -10 V; ID = -100 mA; Tj = 25 °C [1] Conditions Tj = 25 °C Min -20 - Typ 4.
5 Max Unit -50 20 V V -150 mA 7.
5 Ω Static characteristics [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm2.
NXP Semiconductors BSS84AKW 50 V, 150 mA P-channel Trench MOSFET 2.
Pinning information Table 2.
Pin 1 2 3 Pinning information Symbol Description G S D gate source drain 1 2 G 3 D Simplified outline Graphic symbol SOT323 (SC-70) sym146 S 3.
Ordering information Table 3.
Ordering information Package Name BSS84AKW SC-70 Description plastic surface-mounted package; 3 leads Version SOT323 Type number 4.
Marking Table 4.
Marking codes Marking code[1] %VT Type number BSS84AKW [1] % = placeholder for manufacturing site code BSS84AKW All information provided in this document is subject to legal disclaimers.
© NXP B.
V.
2011.
All rights reserved.
Product data sheet Rev.
1 — 23 May 2011 2 of 16 NXP Semiconductors BSS84AKW 50 V, 150 mA P-channel Trench MOSFET 5.
Limiting values Table 5.
Symbol VDS VGS ID IDM Ptot Limiting values Parameter drain-source voltage gate-source voltage drain current peak drain current total power dissipation VGS = -10 V; Tamb = 25 °C VGS = -10 V; Tamb ...


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