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FQPF6N90C

Fairchild Semiconductor
Part Number FQPF6N90C
Manufacturer Fairchild Semiconductor
Description 900V N-Channel MOSFET
Published Aug 20, 2014
Detailed Description FQP6N90C/FQPF6N90C QFET FQP6N90C/FQPF6N90C 900V N-Channel MOSFET General Description These N-Channel enhancement mode p...
Datasheet PDF File FQPF6N90C PDF File

FQPF6N90C
FQPF6N90C

Overview
FQP6N90C/FQPF6N90C QFET FQP6N90C/FQPF6N90C 900V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for high efficiency switch mode power supplies.
TM Features • • • • • • 6A, 900V, RDS(on) = 2.
3Ω @VGS = 10 V Low gate charge ( typical 30 nC) Low Crss ( typical 11 pF) Fast switching 100% avalanche tested Improved dv/dt capability D ! ● ◀ ▲ ● ● G! G DS TO-220 FQP Series GD S TO-220F FQPF Series ! S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) Drain Current - Pulsed (Note 1) FQP6N90C 900 6 3.
8 24 FQPF6N90C 6* 3.
8 * 24 * ± 30 650 6 16.
7 4.
5 Units V A A A V mJ A mJ V/ns W W/°C °C °C Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25°C) (Note 2) (Note 1) (Note 1) (Note 3) - Derate above 25°C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds 167 1.
43 -55 to +150 300 56 0.
48 * Drain current limited by maximum junction temperature.
Thermal Characteristics Symbol RθJC RθJS RθJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Case-to-Sink Typ.
Thermal Resistance, Junction-to-Ambient FQP6N90C 0.
75 0.
5 62.
5 FQPF6N90C 2.
25 -62.
5 Units °C/W °C/W °C/W ©2003 Fairchild Semiconductor Corporation Rev.
A, April 2003 FQP6N90C/FQPF6N90C Electrical Characteristics Symbol Parameter TC = 25°C unless otherwise noted Test Conditions Min Typ Max Units Off Characteristic...


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